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A06: Tailored ultrafast acoustics for light emission modulation

M. Sc. Tobias Henksmeier
Measured (blue) and simulated (red) X-ray diffraction profile for precise growth rate determination.

M. Sc. Tobias Henksmeier, AG Reuter

What is the challenge of my research project? Why am I eager to do it?
I am involved in the second funding period of the TRR142 since last year and continue to the work on project A06. We try to optimize the ultrafast strain pulse technique for modulation of light emission from optically active semiconductors. Therefore, we try to design acoustic mirrors and cavities in the GaAs/AlAs system to obtain specific acoustic pulse profiles. These allow deliberate modulation of light emitters. My part in this project is the III-V molecular beam epitaxial (MBE) growth of these high quality heterostructures and also the advanced growth characterization. This is done by measurements and simulations of x-ray diffraction profiles and photoluminescence measurements.

Why did I choose this project?
My project requires highly precise and reproducible heterostructures growth by MBE. Especially the growth of certain heterostructure layer thicknesses with errors below 1% is challenging as the growth rate must be well known. The implementation of an advance growth control mechanism combined with the idea of light modulation by ultrafast acoustic pulses within one semiconductor heterostructure makes this project so interesting for me. Especially I like the combination of experimental lab work and theoretical modelling within this project.